FDC637BNZ
MOSFET transistor N-Channel SO
Inventory:9,300
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Part Number : FDC637BNZ
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Package/Case : SSOT-6
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Brands : Onsemi
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Components Categories : Single FETs, MOSFETs
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Datesheet : FDC637BNZ DataSheet (PDF)
Overview of FDC637BNZ
This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.These devices have been designed to offer exceptional power dissipation in a very small footprint compared with bigger SO-8 and TSSOP-8 packages.
Key Features
- Max rDS(on) = 24mΩ at VGS = 4.5V, ID = 6.2A
- Max rDS(on) = 32mΩ at VGS = 2.5V, ID = 5.2A
- Fast switching speed
- Low gate charge (8nC typical)
- High performance trench technology for extremely low rDS(on)
- SuperSOT™¨C6 package: small footprint (72% smaller than standard SO-8; low profile (1mm thick)
- HBM ESD protection level > 2kV typical (Note 3)
- Manufactured using green packaging material
- Halide-Free
- RoHS Compliant
Application
- This product is general usage and suitable for many different applications.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SSOT-6 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 20 V |
Id - Continuous Drain Current | 6.2 A | Rds On - Drain-Source Resistance | 24 mOhms |
Vgs - Gate-Source Voltage | - 12 V, + 12 V | Vgs th - Gate-Source Threshold Voltage | 600 mV |
Qg - Gate Charge | 12 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1.6 W |
Channel Mode | Enhancement | Tradename | PowerTrench |
Series | FDC637BNZ | Brand | onsemi / Fairchild |
Configuration | Single | Fall Time | 6 ns |
Height | 1.1 mm | Length | 2.9 mm |
Product | MOSFET Small Signals | Product Type | MOSFET |
Rise Time | 6 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 22 ns | Typical Turn-On Delay Time | 8 ns |
Width | 1.6 mm | Unit Weight | 0.001270 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
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