EN29LV800CB-70TIP
Flash, 512KX16, 70ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, TSOP1-48
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Part Number : EN29LV800CB-70TIP
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Package/Case : TSOP48
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Brands : EON
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Components Categories : Flash Memories
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Datesheet : EN29LV800CB-70TIP DataSheet (PDF)
Overview of EN29LV800CB-70TIP
GENERAL DESCRIPTIONThe EN29LV800C is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800C features 3.0V voltage read and write operation, with access time as fast as 70ns to eliminate the need for WAIT statements in high-performance microprocessor systems.FEATURES• Single power supply operation - Full voltage range: 2.7-3.6 volt read and write operations for battery-powered applications. - Regulated voltage range: 3.0-3.6 volt read and write operations and for compatibility with high performance 3.3 volt microprocessors.• High performance - Access times as fast as 70 ns• Low power consumption (typical values at 5 MHz) - 7 mA typical active read current - 15 mA typical program/erase current - 1 mA typical standby current (standard access time to active mode)• Flexible Sector Architecture: - One 16-Kbyte, two 8-Kbyte, one 32-Kbyte, and fifteen 64-Kbyte sectors (byte mode) - One 8-Kword, two 4-Kword, one 16-Kword and fifteen 32-Kword sectors (word mode)• High performance program/erase speed - Byte/Word program time: 8µs typical - Sector erase time: 500ms typical• Sector protection: - Hardware locking of sectors to prevent program or erase operations within individual sectors - Additionally, temporary Sector Unprotect allows code changes in previously locked sectors.• JEDEC Standard Embedded Erase and Program Algorithms• JEDEC standard DATA# polling and toggle bits feature• Single Sector and Chip Erase• Sector Unprotect Mode• Erase Suspend / Resume modes: Read or program another Sector during Erase Suspend Mode• Low Vcc write inhibit <2.5V• Minimum 100K endurance cycle• Package Options - 48-pin TSOP (Type 1) - 48-ball 6mm x 8mm TFBGA• Industrial temperature Range
Key Features
- Single power supply operation
- - Full voltage range: 2.7-3.6 volt read and write operations for battery-powered applications.
- - Regulated voltage range: 3.0-3.6 volt read and write operations and for compatibility with high performance 3.3 volt microprocessors.
- High performance
- - Access times as fast as 70 ns
- Low power consumption (typical values at 5 MHz)
- - 9 mA typical active read current
- - 20 mA typical program/erase current
- - 1 μA typical standby current (standard access time to active mode)
- Flexible Sector Architecture:
- - One 16-Kbyte, two 8-Kbyte, one 32-Kbyte, and fifteen 64-Kbyte sectors (byte mode)
- - One 8-Kword, two 4-Kword, one 16-Kword and fifteen 32-Kword sectors (word mode)
- High performance program/erase speed
- - Byte/Word program time: 8µs typical
- - Sector erase time: 100ms typical
- Sector protection:
- - Hardware locking of sectors to prevent program or erase operations within individual sectors
- - Additionally, temporary Sector Unprotect allows code changes in previously locked sectors.
- JEDEC Standard Embedded Erase and Program Algorithms
- JEDEC standard DATA# polling and toggle bits feature
- Single Sector and Chip Erase
- Sector Unprotect Mode
- Erase Suspend / Resume modes: Read or program another Sector during Erase Suspend Mode
- Low Vcc write inhibit <2.5V
- Minimum 100K endurance cycle
- Package Options
- - 48-pin TSOP (Type 1)
- - 48-ball 6mm x 8mm TFBGA
- Industrial and Automotive temperature Range
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Rohs Code | Yes | Part Life Cycle Code | Transferred |
Ihs Manufacturer | EON SILICON SOLUTION INC | Package Description | TSOP1, TSSOP48,.8,20 |
Reach Compliance Code | ECCN Code | EAR99 | |
HTS Code | 8542.32.00.51 | Samacsys Manufacturer | Eon Silicon Solution Inc. |
Access Time-Max | 70 ns | Additional Feature | BOTTOM BOOT SECTOR |
Alternate Memory Width | 8 | Boot Block | BOTTOM |
Command User Interface | YES | Data Polling | YES |
Endurance | 100000 Write/Erase Cycles | JESD-30 Code | R-PDSO-G48 |
Length | 18.4 mm | Memory Density | 8388608 bit |
Memory IC Type | FLASH | Memory Width | 16 |
Number of Functions | 1 | Number of Sectors/Size | 1,2,1,15 |
Number of Terminals | 48 | Number of Words | 524288 words |
Number of Words Code | 512000 | Operating Mode | ASYNCHRONOUS |
Operating Temperature-Max | 85 °C | Operating Temperature-Min | -40 °C |
Organization | 512KX16 | Package Body Material | PLASTIC/EPOXY |
Package Code | TSOP1 | Package Equivalence Code | TSSOP48,.8,20 |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE, THIN PROFILE |
Parallel/Serial | PARALLEL | Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Power Supplies | 3/3.3 V | Programming Voltage | 3 V |
Qualification Status | Not Qualified | Ready/Busy | YES |
Seated Height-Max | 1.2 mm | Sector Size | 16K,8K,32K,64K |
Standby Current-Max | 0.000005 A | Supply Current-Max | 0.02 mA |
Supply Voltage-Max (Vsup) | 3.6 V | Supply Voltage-Min (Vsup) | 2.7 V |
Supply Voltage-Nom (Vsup) | 3 V | Surface Mount | YES |
Technology | CMOS | Temperature Grade | INDUSTRIAL |
Terminal Form | GULL WING | Terminal Pitch | 0.5 mm |
Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Toggle Bit | YES | Type | NOR TYPE |
Width | 12 mm |
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Warranty, Returns, and Additional Information
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