DRV8305NEPHPRQ1

The DRV8305-Q1 is a versatile gate driver IC designed for three-phase motor-drive applications. It features three high-accuracy half-bridge drivers, each capable of driving a high-side and low-side N-channel MOSFET. With a charge pump driver that supports 100% duty cycle and low-voltage operation, this device is ideal for cold crank scenarios. Additionally, it can withstand load dump voltages up to 45V, ensuring reliable performance in harsh conditions

Key Features

• AEC-Q100 qualified for automotive applications
• Ambient operating temperature ranges:
  • Temperature grade 0 (E): –40°C to +150°C
  • Temperature grade 1 (Q): –40°C to +125°C
• 4.4-V to 45-V operating voltage
• 1.25-A and 1-A Peak gate drive currents
• Smart gate drive architecture (IDRIVE & TDRIVE)
• Programmable high- and low-side slew-rate control
• Charge-pump gate driver for 100% duty cycle
• Three integrated current-shunt amplifiers
• Integrated 50-mA LDO (3.3-V and 5-V option)
• 3-PWM or 6-PWM input control up to 200 kHz
• Single PWM-mode commutation capability
• Serial Peripheral Interface (SPI) for device settings and fault reporting
• Thermally-enhanced 48-Pin HTQFP
• Protection features:
  • Fault diagnostics and MCU watchdog
  • Programmable dead-time control
  • MOSFET shoot-through prevention
  • MOSFET V_DS overcurrent monitors
  • Gate-driver fault detection
  • Reverse battery-protection support
  • Limp home-mode support
  • Overtemperature warning and shutdown