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DN3135K1-G

Operating at a maximum voltage of 350V, this N-channel MOSFET offers efficient power flow with a low ON-resistance of just 0.072A

Quantity Unit Price(USD) Ext. Price
1 $0.391 $0.39
10 $0.318 $3.18
30 $0.286 $8.58
100 $0.248 $24.80
500 $0.231 $115.50
1000 $0.220 $220.00

Inventory:9,021

*The price is for reference only.
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Quick Inquiry

Please submit RFQ for DN3135K1-G or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of DN3135K1-G

The DN3135K1-G MOSFET is a versatile component designed for N-channel applications, with a maximum continuous drain current of 72mA and a drain-source voltage of 350V. Its low on-resistance of 35ohm ensures efficient power transfer, while the SOT-23-3 casing allows for easy integration into various electronic circuits. With a power dissipation of 360mW, this MOSFET can handle moderate power levels without overheating, making it suitable for a wide range of applications

Key Features

    • High input impedance
    • Low input capacitance
    • Fast switching speeds
    • Low on-resistance
    • Free from secondary breakdown
    • Low input and output leakage

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-23-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 350 V
Id - Continuous Drain Current 72 mA Rds On - Drain-Source Resistance 35 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 3.5 V
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 360 mW Channel Mode Depletion
Brand Microchip Technology Configuration Single
Fall Time 20 ns Forward Transconductance - Min 140 mS
Height 0.95 mm Length 2.9 mm
Product MOSFET Small Signals Product Type MOSFET
Rise Time 15 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 N-Channel
Type FET Typical Turn-Off Delay Time 15 ns
Typical Turn-On Delay Time 10 ns Width 1.3 mm
Unit Weight 0.000282 oz

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