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DMC2053UVT-7

TSOT26 packaged MOSFET with a BVDSS of 8V to 24V, comes in tape and reel packaging with 3K quantity

Quantity Unit Price(USD) Ext. Price
5 $0.150 $0.75
50 $0.122 $6.10
150 $0.110 $16.50
500 $0.095 $47.50
3000 $0.088 $264.00
6000 $0.085 $510.00

Inventory:5,129

*The price is for reference only.
  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
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  • 7*24 hours service quarantee
  • Part Number : DMC2053UVT-7

  • Package/Case : TSOT-26-6

  • Brands : Diodes Incorporated

  • Components Categories : FET, MOSFET Arrays

  • Datesheet : DMC2053UVT-7 DataSheet (PDF)

Quick Inquiry

Please submit RFQ for DMC2053UVT-7 or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of DMC2053UVT-7

Mosfet Array 20V 4.6A (Ta), 3.2A (Ta) 700mW (Ta) Surface Mount TSOT-26

Key Features

  • High reliability and ruggedness
  • Wide temperature operating range
  • Low capacitance
  • RoHS compliant
  • Surface mount package
  • High ESD protection level
  • Suitable for high-speed data transmission
  • Applications include USB, HDMI, Ethernet, etc.

Application

  • UV curing in printing industry
  • UV bonding in electronics manufacturing
  • UV disinfection in healthcare facilities
  • UV inspection in forensic science
  • UV coating in automotive industry
  • UV sterilization in food and beverage production
  • UV curing in furniture manufacturing
  • UV inspection in art restoration
  • UV bonding in jewelry making
  • UV sterilization in water treatment plants

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case TSOT-26-6 Transistor Polarity N-Channel, P-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 4.6 A, 3.2 A Rds On - Drain-Source Resistance 35 mOhms, 74 mOhms
Vgs - Gate-Source Voltage - 12 V, + 12 V Vgs th - Gate-Source Threshold Voltage 400 mV, 1 V
Qg - Gate Charge 3.6 nC, 5.9 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 1.1 W
Channel Mode Enhancement Brand Diodes Incorporated
Configuration Dual Fall Time 3.6 ns, 18 ns
Product Type MOSFET Rise Time 3 ns, 7.8 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 N-Channel, 1 P-Channel Typical Turn-Off Delay Time 12.5 ns, 31 ns
Typical Turn-On Delay Time 2.6 ns, 3.2 ns Unit Weight 0.000282 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

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    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

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