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CY7C1062DV33-10BGXI

SRAM 16Mb 10ns 512Kx32 Fast Async SRAM

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Overview of CY7C1062DV33-10BGXI

The CY7C1062DV33-10BGXI is a high-speed, low-power 3.3V 1Mb asynchronous SRAM designed for use in a wide range of applications. It offers fast access times and low standby current, making it ideal for memory storage and data buffering.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • OE: Output Enable
  • WE: Write Enable
  • A0-A18: Address Inputs
  • DQ0-DQ15: Data Inputs/Outputs
  • VCC: Power Supply
  • GND: Ground
  • NC: No Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the CY7C1062DV33-10BGXI SRAM for a visual representation.

Key Features

  • High-Speed Operation: Offers fast access times for efficient data retrieval.
  • Low Power Consumption: Features low standby current for power-efficient operation.
  • 3.3V Operation: Designed for use with a 3.3V power supply, suitable for modern electronic systems.
  • 1Mb Capacity: Provides 1 megabit of storage capacity for data storage applications.
  • Industrial Temperature Range: Operates reliably within an industrial temperature range for versatile deployment.

Note: For detailed technical specifications, please refer to the CY7C1062DV33-10BGXI datasheet.

Application

  • Memory Storage: Ideal for storing program data and variables in embedded systems.
  • Data Buffering: Suitable for buffering data between different components in electronic devices.
  • Communication Systems: Used in communication systems for temporary data storage and retrieval.

Functionality

The CY7C1062DV33-10BGXI is a high-speed, low-power asynchronous SRAM that provides reliable data storage and fast access times. It is well-suited for various applications requiring efficient memory solutions.

Usage Guide

  • Power Supply: Connect VCC (Pin) to a 3.3V power supply and GND (Pin) to the ground.
  • Address/Input Connections: Connect the address lines (A0-A18) and data lines (DQ0-DQ15) as per the system requirements.
  • Control Signals: Utilize the OE and WE pins for output enable and write enable functionalities, respectively.

Frequently Asked Questions

Q: What is the access time of the CY7C1062DV33-10BGXI?
A: The CY7C1062DV33-10BGXI offers fast access times suitable for high-performance applications.

Q: Is the CY7C1062DV33-10BGXI compatible with 5V systems?
A: No, the CY7C1062DV33-10BGXI operates with a 3.3V power supply and is not directly compatible with 5V systems.

Equivalent

For similar functionalities, consider these alternatives to the CY7C1062DV33-10BGXI:

  • IS61LV25616AL: A low-power 256K x 16 asynchronous SRAM offering comparable features to the CY7C1062DV33-10BGXI.
  • AS6C62256: This is a 256K x 16 low-power CMOS SRAM suitable for applications requiring similar memory specifications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category SRAM RoHS Details
Memory Size 16 Mbit Organization 512 k x 32
Access Time 10 ns Interface Type Parallel
Supply Voltage - Max 3.6 V Supply Voltage - Min 3 V
Supply Current - Max 175 mA Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 85 C Mounting Style SMD/SMT
Package / Case PBGA-119 Brand Infineon Technologies
Memory Type SDR Moisture Sensitive Yes
Product Type SRAM Series CY7C1062DV33
Factory Pack Quantity 84 Subcategory Memory & Data Storage
Type Asynchronous Unit Weight 0.035203 oz

Warranty & Returns

Warranty, Returns, and Additional Information

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    Returns for refund: within 90 days

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