BSS123-7-F
MODE FIELD EFFECT TRANSISTOR
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
20 | $0.023 | $0.46 |
200 | $0.020 | $4.00 |
600 | $0.018 | $10.80 |
3000 | $0.017 | $51.00 |
9000 | $0.016 | $144.00 |
21000 | $0.015 | $315.00 |
Inventory:6,129
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Part Number : BSS123-7-F
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Package/Case : SOT23-3
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Brands : DIODES
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Components Categories : FETs, MOSFETsSingle FETs, MOSFETs
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Datesheet : BSS123-7-F DataSheet (PDF)
The BSS123-7-F is a logic level enhancement mode field-effect transistor (FET) designed for low voltage, high-speed switching applications. This transistor features a low threshold voltage, making it suitable for interfacing with microcontrollers and other low-voltage digital circuits. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Incorporate a circuit diagram illustrating the connections and operation of the BSS123-7-F transistor for a visual representation. Note: For detailed technical specifications, please refer to the BSS123-7-F datasheet. Functionality The BSS123-7-F transistor is designed for high-speed, low-voltage switching applications. It provides efficient switching with its low threshold voltage, making it ideal for interfacing with microcontrollers and digital circuits. Usage Guide For similar functionalities, consider these alternatives to the BSS123-7-F:Overview of BSS123-7-F
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOT-23-3 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 100 V |
Id - Continuous Drain Current | 170 mA | Rds On - Drain-Source Resistance | 6 Ohms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 800 mV |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 300 mW | Channel Mode | Enhancement |
Series | BSS123 | Brand | Diodes Incorporated |
Configuration | Single | Fall Time | 8 ns |
Forward Transconductance - Min | 0.08 S | Height | 1 mm |
Length | 2.9 mm | Product | MOSFET Small Signals |
Product Type | MOSFET | Rise Time | 8 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Type | Enhancement Mode Field Effect Transistor |
Typical Turn-Off Delay Time | 13 ns | Typical Turn-On Delay Time | 8 ns |
Width | 1.3 mm | Unit Weight | 0.000282 oz |
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