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BC141-10

Bipolar Transistors - BJT Epitaxial Planar NPN

Inventory:8,535

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Overview of BC141-10

Bipolar (BJT) Transistor NPN 60 V 1 A 50MHz 650 mW Through Hole TO-39

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Bipolar Transistors - BJT RoHS Details
Mounting Style Through Hole Package / Case TO-39-3
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 60 V Collector- Base Voltage VCBO 100 V
Emitter- Base Voltage VEBO 7 V Collector-Emitter Saturation Voltage 600 mV
Maximum DC Collector Current 1.5 A Pd - Power Dissipation 3.7 W
Minimum Operating Temperature - 65 C Maximum Operating Temperature + 150 C
Series BC141 Brand STMicroelectronics
Continuous Collector Current 1 A DC Current Gain hFE Max 160
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 500
Subcategory Transistors Technology Si

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