BC141-10
Bipolar Transistors - BJT Epitaxial Planar NPN
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Part Number : BC141-10
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Package/Case : TO39-3
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Brands : Stmicroelectronics
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Components Categories : Single Bipolar Transistors
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Datesheet : BC141-10 DataSheet (PDF)
Overview of BC141-10
Bipolar (BJT) Transistor NPN 60 V 1 A 50MHz 650 mW Through Hole TO-39
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | Bipolar Transistors - BJT | RoHS | Details |
Mounting Style | Through Hole | Package / Case | TO-39-3 |
Transistor Polarity | NPN | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 60 V | Collector- Base Voltage VCBO | 100 V |
Emitter- Base Voltage VEBO | 7 V | Collector-Emitter Saturation Voltage | 600 mV |
Maximum DC Collector Current | 1.5 A | Pd - Power Dissipation | 3.7 W |
Minimum Operating Temperature | - 65 C | Maximum Operating Temperature | + 150 C |
Series | BC141 | Brand | STMicroelectronics |
Continuous Collector Current | 1 A | DC Current Gain hFE Max | 160 |
Product Type | BJTs - Bipolar Transistors | Factory Pack Quantity | 500 |
Subcategory | Transistors | Technology | Si |
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