AUIRF7343QTR
Trans MOSFET N/P-CH Si 55V 4.7A/3.4A Automotive 8-Pin SOIC T/R
| Quantity | Unit Price(USD) | Ext. Price |
|---|---|---|
| 1 | $4.712 | $4.71 |
| 10 | $4.116 | $41.16 |
| 30 | $3.762 | $112.86 |
| 100 | $3.404 | $340.40 |
| 500 | $3.237 | $1,618.50 |
| 1000 | $3.163 | $3,163.00 |
Inventory:7,589
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Part Number : AUIRF7343QTR
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Package/Case : 8-SOIC(0.154",3.90mmWidth)
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Brands : Infineon Technologies
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Components Categories : FET, MOSFET Arrays
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Datesheet : AUIRF7343QTR DataSheet (PDF)
Overview of AUIRF7343QTR
MOSFET,NP CH,55V,4.7A,3.4A,SO8; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 4.7A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.043ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V;
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Series | HEXFET® | Product Status | Obsolete |
| Technology | MOSFET (Metal Oxide) | Configuration | N and P-Channel |
| FET Feature | Logic Level Gate | Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 4.7A, 3.4A | Rds On (Max) @ Id, Vgs | 50mOhm @ 4.7A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 740pF @ 25V | Power - Max | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | Supplier Device Package | 8-SOIC |
| Base Product Number | AUIRF7343 |
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Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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