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AUIRF5210STRL

INFINEON - AUIRF5210STRL - MOSFET Transistor, P Channel, 38 A, 100 V, 0.06 ohm, 10 V, 4 V

Inventory:7,962

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  • Part Number : AUIRF5210STRL

  • Package/Case : TO-263-3,D2PAK(2Leads+Tab),TO-263AB

  • Brands : Infineon Technologies

  • Components Categories : Single FETs, MOSFETs

  • Datesheet : AUIRF5210STRL DataSheet (PDF)

Quick Inquiry

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Overview of AUIRF5210STRL

MOSFET, AEC-Q101, P-CH, -100V, TO-263; Transistor Polarity: P Channel; Continuous Drain Current Id: -38A; Drain Source Voltage Vds: -100V; On Resistance Rds(on): 0.06ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 170W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series HEXFET® Product Status Last Time Buy
FET Type P-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 60mOhm @ 38A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 230 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2780 pF @ 25 V
Power Dissipation (Max) 3.1W (Ta), 170W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Supplier Device Package D2PAK
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Base Product Number AUIRF5210

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