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ATF-36077-STR

RF JFET Transistors Transistor GaAs High Frequency

Inventory:8,227

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Overview of ATF-36077-STR

RF Mosfet 1.5 V 10 mA 12GHz 12dB 5dBm 77

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category RF JFET Transistors RoHS Details
Transistor Type pHEMT Technology GaAs
Operating Frequency 12 GHz Gain 12 dB
Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 3 V
Vgs - Gate-Source Breakdown Voltage - 3 V Id - Continuous Drain Current 45 mA
Maximum Operating Temperature + 150 C Pd - Power Dissipation 180 mW
Mounting Style SMD/SMT Package / Case 77
Brand Broadcom / Avago Configuration Single Dual Source
Forward Transconductance - Min 55 mS NF - Noise Figure 0.5 dB
P1dB - Compression Point 5 dBm Product RF JFET
Product Type RF JFET Transistors Factory Pack Quantity 100
Subcategory Transistors Type GaAs pHEMT

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Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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