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AS4C256M16D3B-12BIN

DRAM 4G 1.5V 800MHz 256Mx16 DDR3 I-Temp

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Overview of AS4C256M16D3B-12BIN

The AS4C256M16D3B-12BIN is a 512Mb DDR3 SDRAM module designed for use in computing and embedded systems. It operates at a speed of 1200MHz (12ns) and provides high-speed data transfer for improved system performance.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • VDD: Power supply
  • VSS: Ground connection
  • DQ: Data input/output pins
  • CK: Clock input
  • CS: Chip select for device activation
  • WE: Write enable for writing data
  • RAS: Row address strobe for row activation
  • CAS: Column address strobe for column activation
  • BA: Bank address for bank selection
  • DM: Data Mask for data integrity
  • DQS: Data strobe for data synchronization
  • DM: Data Mask for data integrity
  • ODT: On-Die Termination for signal integrity

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the AS4C256M16D3B-12BIN module for a visual representation.

Key Features

  • 512Mb DDR3 SDRAM: Provides a high-capacity memory solution for various applications.
  • 1200MHz Speed: Operating at 1200MHz (12ns), the module offers fast and efficient data transfer rates.
  • Wide Compatibility: Compatible with a range of computing and embedded systems requiring DDR3 SDRAM.
  • Low Power Consumption: Designed for energy efficiency in system operations.
  • Data Integrity: Features Data Mask and On-Die Termination for enhanced data reliability.

Note: For detailed technical specifications, please refer to the AS4C256M16D3B-12BIN datasheet.

Application

  • Computing Systems: Ideal for use in desktops, laptops, and servers for memory expansion.
  • Embedded Systems: Suitable for embedded applications requiring high-speed and reliable memory.
  • Networking Devices: Used in networking equipment for data processing and caching purposes.

Functionality

The AS4C256M16D3B-12BIN DDR3 SDRAM module provides high-speed data storage and retrieval capabilities, enhancing system performance in various computing and embedded applications.

Usage Guide

  • Power Supply: Connect VDD (Pin 1) and VSS (Pin 2) to the appropriate power sources.
  • Data Connections: Utilize DQ pins for data input and output operations within the system.
  • CLK Configuration: Input the system clock signal to the CK pin for synchronization.

Frequently Asked Questions

Q: What is the data transfer rate of the AS4C256M16D3B-12BIN module?
A: The module operates at a speed of 1200MHz, providing fast data transfer rates for efficient system performance.

Q: Is the AS4C256M16D3B-12BIN compatible with DDR2 systems?
A: No, the AS4C256M16D3B-12BIN is a DDR3 SDRAM module and is not compatible with DDR2 systems due to different interface specifications.

Equivalent

For similar memory solutions, consider these alternatives to the AS4C256M16D3B-12BIN:

  • MT47H64M16HR-25E:Hynix DDR3 SDRAM module with comparable specifications for memory expansion.
  • NT5CC256M16DP-DI:Nanya DDR3 SDRAM module providing high-speed data processing capabilities.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category DRAM RoHS Details
Type SDRAM - DDR3 Mounting Style SMD/SMT
Package / Case FBGA-96 Data Bus Width 16 bit
Organization 256 M x 16 Memory Size 4 Gbit
Maximum Clock Frequency 800 MHz Access Time 20 ns
Supply Voltage - Max 1.575 V Supply Voltage - Min 1.425 V
Supply Current - Max 75 mA Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 95 C Series AS4C256M16D3B-12
Brand Alliance Memory Moisture Sensitive Yes
Product Type DRAM Factory Pack Quantity 180
Subcategory Memory & Data Storage Unit Weight 0.215728 oz

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