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APT12057B2LLG

Trans MOSFET N-CH 1.2KV 22A 3-Pin(3+Tab) T-MAX Tube

Quantity Unit Price(USD) Ext. Price
1 $101.256 $101.26
200 $40.402 $8,080.40
500 $39.052 $19,526.00
1000 $38.385 $38,385.00

Inventory:9,873

*The price is for reference only.
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Quick Inquiry

Please submit RFQ for APT12057B2LLG or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of APT12057B2LLG

APT12057B2LLG is a Power MOS 7® product that offers a solution for low loss, high voltage, N-Channel enhancement mode power MOSFETS. It addresses both conduction and switching losses by lowering RDS(ON)and Qg, resulting in improved performance. The exceptional fast switching speeds of Power MOS 7® make it a suitable choice for applications where reducing losses and achieving fast switching are critical

Key Features

    • Power Semiconductors, Power Modules and RF Power MOSFETs Catalog
    • Eliminating Parasitic Oscillation between Parallel MOSFETs
    • High Frequency Resonant Half Bridge
    • Improved Power MOSFETS Boost Efficiency IN A 3.5kw Single Phase PFC
    • Introduction to MOSFETs
    • Latest Technology PT IGBTs vs. Power MOSFETs
    • Making Use of Gate Charge Information In MOSFET and IGBT Data Sheets
    • Optimizing MOSFET and IGBT Gate Current to Minimize dv/dt Induced Failures in SMPS Circuits
    • Turn Off Snubber Design for High Frequency Modules
    • VDS(on) VCE(sat) Measurement

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer Microchip Product Category MOSFET
RoHS Details Technology Si
Mounting Style Through Hole Package / Case T-MAX-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 1.2 kV Id - Continuous Drain Current 22 A
Rds On - Drain-Source Resistance 570 mOhms Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 3 V Qg - Gate Charge 290 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 690 W Channel Mode Enhancement
Brand Microchip Technology Configuration Single
Fall Time 21 ns Product Type MOSFET
Rise Time 20 ns Factory Pack Quantity 1
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 36 ns Typical Turn-On Delay Time 11 ns
Unit Weight 0.208116 oz

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Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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