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AO6602

Trans MOSFET N/P-CH 30V 3.5A/2.7A 6-Pin TSOP T/R

Quantity Unit Price(USD) Ext. Price
5 $0.113 $0.56
50 $0.098 $4.90
150 $0.091 $13.65
500 $0.084 $42.00
3000 $0.076 $228.00
6000 $0.074 $444.00

Inventory:8,190

*The price is for reference only.
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Please submit RFQ for AO6602 or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of AO6602

The AO6602 is a P-channel enhancement mode field-effect transistor (FET) designed for use in power management applications. This FET features a low on-resistance and high current-carrying capability, making it ideal for battery protection, load switching, and other power control functions.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • GATE: Gate terminal for controlling the FET
  • SOURCE: Source terminal for the P-channel FET
  • DRAIN: Drain terminal for the P-channel FET

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the AO6602 FET for a visual representation.

Key Features

  • P-Channel Enhancement Mode FET: The AO6602 is a P-channel FET operating in enhancement mode for efficient power management.
  • Low On-Resistance: This FET offers low on-resistance to minimize power losses and improve efficiency.
  • High Current Capability: With its high current-carrying capacity, the AO6602 is suitable for various power control applications.
  • Compact Package: Available in a compact SOT-23 package for space-efficient PCB design.

Note: For detailed technical specifications, please refer to the AO6602 datasheet.

Application

  • Battery Protection: Ideal for battery protection circuits in portable electronic devices.
  • Load Switching: Suitable for load switching applications in power management systems.
  • Power Control: Used in various power control functions such as voltage regulation and current limiting.

Functionality

The AO6602 P-channel FET enables efficient power management by providing low on-resistance and high current capability. It is a reliable component for controlling and switching power in various applications.

Usage Guide

  • Gate Control: Apply appropriate gate voltage to turn the FET on or off as needed.
  • Load Connection: Connect the load between the drain and source terminals to control current flow.
  • Biasing: Ensure proper biasing to maintain the FET in the desired operating region.

Frequently Asked Questions

Q: What is the maximum voltage rating of the AO6602?
A: The AO6602 has a maximum voltage rating specified in the datasheet. Ensure proper voltage compatibility for your application.

Q: Can the AO6602 be used in high-current applications?
A: Yes, the AO6602 is designed to handle high currents within its specified limits. Refer to the datasheet for detailed current ratings.

Equivalent

For similar functionalities, consider these alternatives to the AO6602:

  • BSS84P: This is a P-channel FET with similar characteristics and performance to the AO6602 from a different manufacturer.
  • AP2306: Another P-channel FET option offering comparable features and applications to the AO6602.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code Yes Part Life Cycle Code Active
Ihs Manufacturer ALPHA & OMEGA SEMICONDUCTOR LTD Reach Compliance Code compliant
ECCN Code EAR99 Samacsys Manufacturer Alpha & Omega Semiconductors
Drain Current-Max (Abs) (ID) 3.5 A Drain Current-Max (ID) 3.5 A
FET Technology METAL-OXIDE SEMICONDUCTOR JESD-609 Code e3
Moisture Sensitivity Level 1 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL AND P-CHANNEL Power Dissipation-Max (Abs) 1.15 W
Surface Mount YES Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 30

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    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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