• AO4447A 8-SOIC
AO4447A 8-SOIC

AO4447A

Trans MOSFET P-CH 30V 18.5A 8-Pin SOIC T/R

Quantity Unit Price(USD) Ext. Price
1 $0.486 $0.49
10 $0.395 $3.95
30 $0.355 $10.65
100 $0.307 $30.70
500 $0.263 $131.50
1000 $0.251 $251.00

Inventory:5,607

*The price is for reference only.
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Overview of AO4447A

The AO4447A is a high-power N-channel MOSFET transistor designed for use in power management applications. This MOSFET features a low on-resistance and high current capacity, making it suitable for efficient power switching in various electronic circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Gate (G): Controls the switching of the MOSFET
  • Drain (D): Connects to the high-power output
  • Source (S): Connected to the ground or power supply

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the AO4447A MOSFET for a visual representation.

Key Features

  • High Power Handling Capacity: The AO4447A can handle high power levels, making it suitable for power management applications.
  • Low On-Resistance: With a low on-resistance, this MOSFET minimizes power loss and heat generation during operation.
  • Fast Switching Speed: Offers fast switching times for efficient power control in electronic circuits.
  • Wide Voltage Range: Operates within a wide voltage range, providing flexibility in various power supply configurations.

Note: For detailed technical specifications, please refer to the AO4447A datasheet.

Application

  • Power Management Systems: Ideal for use in power management systems to regulate and control power flow.
  • Switching Circuits: Suitable for switching applications in electronic circuits where high power handling is required.
  • Motor Control: Can be used in motor control circuits for efficient power switching and control.

Functionality

The AO4447A MOSFET transistor is designed to efficiently switch high-power loads in electronic circuits, offering low on-resistance and fast switching speeds for improved performance and power management.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the Gate pin to control the switching operation of the MOSFET.
  • Drain Connection: Connect the Drain pin to the high-power output or load.
  • Source Connection: Connect the Source pin to the ground or power supply reference point.

Frequently Asked Questions

Q: Is the AO4447A suitable for high-frequency switching applications?
A: Yes, the fast switching speed of the AO4447A makes it suitable for high-frequency switching applications where quick response times are essential.

Equivalent

For similar functionalities, consider these alternatives to the AO4447A:

  • IRF3205: A high-power N-channel MOSFET with similar characteristics to the AO4447A, suitable for power management applications.
  • BUZ11: This MOSFET offers comparable performance to the AO4447A and can be used in similar power switching applications.

AO4447A

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pbfree Code Yes Rohs Code Yes
Part Life Cycle Code Active Ihs Manufacturer ALPHA & OMEGA SEMICONDUCTOR LTD
Part Package Code SOT Package Description SMALL OUTLINE, R-PDSO-G8
Pin Count 8 Reach Compliance Code compliant
ECCN Code EAR99 HTS Code 8541.29.00.95
Samacsys Manufacturer Alpha & Omega Semiconductors Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
DS Breakdown Voltage-Min 30 V Drain Current-Max (ID) 17 A
Drain-source On Resistance-Max 0.007 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8 Number of Elements 1
Number of Terminals 8 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL Power Dissipation Ambient-Max 3.1 W
Power Dissipation-Max (Abs) 3.1 W Surface Mount YES
Terminal Form GULL WING Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Transistor Application SWITCHING
Transistor Element Material SILICON

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