2SK3569
MOSFET N-Ch 600V 10A Rdson 0.75 Ohm
| Quantity | Unit Price(USD) | Ext. Price |
|---|---|---|
| 1 | $2.867 | $2.87 |
| 10 | $2.516 | $25.16 |
| 50 | $2.306 | $115.30 |
| 100 | $2.096 | $209.60 |
| 500 | $1.998 | $999.00 |
| 1000 | $1.954 | $1,954.00 |
Inventory:5,480
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : 2SK3569
-
Package/Case : TO-220FP-3
-
Brands : TOSHIBA
-
Components Categories : Power Field-Effect Transistors
-
Datesheet : 2SK3569 DataSheet (PDF)
Overview of 2SK3569
Switching Regulator Applications• Low drain-source ON-resistance: RDS (ON) = 0.54 Ω (typ.)• High forward transfer admittance: |Yfs| = 8.5 S (typ.)• Low leakage current: IDSS = 100 μA (max) (VDS = 600 V)• Enhancement mode: Vth = 2.0 ~ 4.0 V (VDS = 10 V, ID = 1 mA)
Application
SWITCHING
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Source Content uid | 2SK3569 | Pbfree Code | Yes |
| Part Life Cycle Code | Lifetime Buy | Ihs Manufacturer | TOSHIBA CORP |
| Part Package Code | SC-67 | Package Description | LEAD FREE, 2-10U1B, SC-67, 3 PIN |
| Pin Count | 3 | Reach Compliance Code | |
| ECCN Code | EAR99 | Samacsys Manufacturer | Toshiba |
| Avalanche Energy Rating (Eas) | 363 mJ | Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 600 V | Drain Current-Max (ID) | 10 A |
| Drain-source On Resistance-Max | 0.75 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PSFM-T3 | Number of Elements | 1 |
| Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT | Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 40 A | Qualification Status | Not Qualified |
| Surface Mount | NO | Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE | Transistor Application | SWITCHING |
| Transistor Element Material | SILICON | Manufacturer | Toshiba |
| Product Category | MOSFET | RoHS | N |
| Technology | Si | Mounting Style | Through Hole |
| Package / Case | TO-220FP-3 | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 600 V |
| Id - Continuous Drain Current | 10 A | Rds On - Drain-Source Resistance | 750 mOhms |
| Series | 2SK3569 | Brand | Toshiba |
| Height | 15 mm | Length | 10 mm |
| Product Type | MOSFET | Factory Pack Quantity | 50 |
| Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
| Width | 4.5 mm | Unit Weight | 0.068784 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, SF, UPS, or DHL.UPS, or DHL.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA, MasterCard, UnionPay, Western Union, PayPal, and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
Similar Product
2SJ380
MOSFET 220NIS2 PLN,DISCON(08-10)/PHASE-OUT(11-01)/OBSOLETE(11-04),
2SK4017
N-Channel 60 V 5A (Ta) 20W (Tc) Through Hole PW-MOLD2
2SK2231
Trans MOSFET N-CH Si 60V 5A 3-Pin(2+Tab) New PW-Mold
2SJ681
P-Channel 60 V 5A (Ta) 20W (Ta) Through Hole PW-MOLD2
2SJ334
MOSFET 220NIS2 PLN,DISCON(08-10)/PHASE-OUT(11-01)/OBSOLETE(11-04),
TK12A80W
Silicon N-Channel MOS (DTMOS), TO-220SIS
TK09H90A
Power MOSFET (N-ch 700V<VDSS)