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2SC2335

Power package transistor NPN

Quantity Unit Price(USD) Ext. Price
5 $0.339 $1.70
50 $0.275 $13.75
200 $0.246 $49.20
500 $0.206 $103.00
2500 $0.190 $475.00
5000 $0.180 $900.00

Inventory:7,140

*The price is for reference only.
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Quick Inquiry

Please submit RFQ for 2SC2335 or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of 2SC2335

NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHINGThe 2SC2335 is a mold power transistor developed for high-speed high-voltage switching, and is ideal for use as a driver in devices such as switching regulators, DC/DC converters, and high-frequency power amplifiers.FEATURES• Low collector saturation voltage: VCE(sat) = 1.0 V MAX. @IC = 3.0 A• Fast switching speed: tf = 1.0 µs MAX. @IC = 3.0 A• Wide base reverse-bias SOA: VCEX(SUS)1 = 450 V MIN. @IC = 3.0 A

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code No Part Life Cycle Code Contact Manufacturer
Ihs Manufacturer CONTINENTAL DEVICE INDIA LTD Part Package Code SFM
Package Description FLANGE MOUNT, R-PSFM-T3 Pin Count 3
Reach Compliance Code compliant ECCN Code EAR99
HTS Code 8541.29.00.95 Collector Current-Max (IC) 7 A
Collector-Emitter Voltage-Max 400 V Configuration SINGLE
DC Current Gain-Min (hFE) 10 JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3 JESD-609 Code e0
Number of Elements 1 Number of Terminals 3
Operating Temperature-Max 150 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style FLANGE MOUNT
Polarity/Channel Type NPN Power Dissipation Ambient-Max 40 W
Power Dissipation-Max (Abs) 40 W Qualification Status Not Qualified
Surface Mount NO Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Transistor Element Material SILICON VCEsat-Max 1 V

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