• 2N7002Q-7-F
2N7002Q-7-F

2N7002Q-7-F

Trans MOSFET N-CH 60V 0.21A Automotive AEC-Q101 3-Pin SOT-23 T/R

Quantity Unit Price(USD) Ext. Price
10 $0.033 $0.33
100 $0.028 $2.80
300 $0.026 $7.80
3000 $0.024 $72.00
6000 $0.023 $138.00
9000 $0.022 $198.00

Inventory:7,976

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Overview of 2N7002Q-7-F

The 2N7002Q-7-F is an N-channel enhancement-mode MOSFET transistor designed for switching applications in electronic circuits. This transistor features a compact SOT-23 package and low threshold voltage, making it suitable for use in power management, load switching, and other power control applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate (Control)
  • D: Drain (Output)
  • S: Source (Ground)


Circuit Diagram

Include a circuit diagram showing the connections and operation of the 2N7002Q-7-F MOSFET for a visual representation.

Key Features

  • Enhancement-Mode MOSFET: The 2N7002Q-7-F is an N-channel enhancement-mode MOSFET, allowing for easy control of power flow in circuits.
  • Low Threshold Voltage: With a low threshold voltage, this MOSFET can be easily driven by logic level signals in various applications.
  • Compact Package: Housed in a SOT-23 package, the 2N7002Q-7-F offers space-saving benefits for compact electronic designs.
  • High Switching Speed: This MOSFET provides high-speed switching capabilities, suitable for applications requiring quick on/off transitions.
  • Low On-Resistance: The 2N7002Q-7-F features low on-resistance for efficient power switching and minimal voltage drops.

Note: For detailed technical specifications, please refer to the 2N7002Q-7-F datasheet.

Application

  • Power Management: Ideal for use in power management circuits, DC-DC converters, and battery charging applications.
  • Load Switching: Suitable for load switching applications in automotive electronics, IoT devices, and power distribution systems.
  • Switching Circuits: Used in various electronic circuits for signal switching, level shifting, and power control functions.

Functionality

The 2N7002Q-7-F N-channel MOSFET transistor enables efficient switching and control of power in electronic circuits. It serves as a reliable component for managing current flow and voltage regulation in diverse applications.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the Gate (G) pin for controlling the flow of current between the Drain (D) and Source (S) pins.
  • Load Connection: Connect the load to the Drain (D) pin of the MOSFET for power switching operations.
  • Ground Connection: Connect the Source (S) pin to the ground reference of the circuit for proper operation.

Frequently Asked Questions

Q: Can the 2N7002Q-7-F be used for low-power applications?
A: Yes, the 2N7002Q-7-F with its low threshold voltage and compact package is suitable for low-power switching applications in electronics.

Equivalent

For similar functionalities, consider these alternatives to the 2N7002Q-7-F:

  • IRLML2502TRPBF: An N-channel MOSFET with similar characteristics and package type, suitable for power management applications.
  • DMN6020SSD-13: This MOSFET offers comparable performance to the 2N7002Q-7-F and is commonly used for power switching tasks.

2N7002Q-7-F

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer Diodes Incorporated Product Category IC Chips
Mfr Diodes Incorporated Series Automotive AEC-Q101
Package Tape & Reel (TR)Cut Tape (CT)Digi-Reel® Product-Status Active
FET-Type N-Channel Technology 170mA (Ta)
Drain-to-Source-Voltage-Vdss 2.5V @ 250µA Current-Continuous-Drain-Id-25°C 0.233 nC @ 10 V
Drive-Voltage-Max-Rds-On-Min-Rds-On - Rds-On-Max-Id-Vgs 370mW (Ta)
Vgs-th-Max-Id -55°C ~ 150°C (TJ) Gate-Charge-Qg-Max-Vgs TO-236-3 SC-59 SOT-23-3
Vgs-Max 2N7002

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