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2N2222AUATXV

Trans GP BJT NPN 50V 0.8A 500mW 4-Pin CSMD Waffle

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Overview of 2N2222AUATXV

Bipolar (BJT) Transistor NPN 50 V 800 mA 500 mW Surface Mount 4-CLCC (5.59x3.81)

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer TT Electronics Product Category Bipolar Transistors - BJT
Mounting Style Through Hole Package / Case TO-18-3
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 40 V Collector- Base Voltage VCBO 75 V
Emitter- Base Voltage VEBO 6 V Collector-Emitter Saturation Voltage 1 V
Pd - Power Dissipation 500 mW Gain Bandwidth Product fT 300 MHz
Minimum Operating Temperature - 65 C Maximum Operating Temperature + 200 C
Brand Optek / TT Electronics Continuous Collector Current 800 mA
DC Collector/Base Gain hfe Min 100 at 150 mA, 10 V DC Current Gain hFE Max 300 at 150 mA, 10 V
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 120
Subcategory Transistors Technology Si

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