1EDS20I12SV

The 1EDS20I12SV chip represents the cutting edge of semiconductor technology, providing unparalleled performance and reliability for power electronics applications. Its robust protection mechanisms ensure the longevity and stability of your systems, giving you peace of mind in even the most demanding operating conditions. This chip is designed to meet the stringent requirements of industrial and automotive systems, making it a versatile and essential component for a wide range of applications

Key Features

• Dedicated gate driver ICs for high-voltage GaN power switches (CoolGaN™, GIT technology based products)
• – low driving impedance (on-resistance 0.85 Ω source, 0.35 Ω sink)
• – resistor programmable gate current (typ. 10 mA) in steady “on” state
• – programmable negative gate voltage to completely avoid spurious turn-on
• Single output supply voltage (typ. 8 V, floating)
• Switching behavior independent of duty-cycle (2 "off" voltage levels)
• Differential concept to ensure negative gate drive voltage under any condition
• Fast input-to-output propagation (37 ns) with excellent stability (+7/-6 ns)
• Galvanic input-to-output isolation based on coreless transformer (CT) technology
• Common mode transient immunity (CMTI)> 200 V/ns
• 3 package versions
• – 1EDF5673K: 13-pin LGA (5 x 5 mm, PG-TFLGA-13-1) for functional isolation (1.5 kV)
• – 1EDF5673F: 16-pin P-DSO (150 mil, PG-DSO-16-11) for functional isolation (1.5 kV)
• – 1EDS5663H: 16-pin P-DSO (300 mil, PG-DSO-16-30) for safe isolation (6 kV)
• Fully qualified according to JEDEC for Industrial Applications